FORMATION OF DISLOCATIONS DURING LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS SINGLE CRYSTALSDUSEAUX M; JACOB G.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 790-793; BIBL. 21 REF.Article

DISLOCATIONS IN GAASJACOB G; FARGES JP; SCHEMALI G et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 57; NO 2; PP. 245-258; BIBL. 38 REF.Article

Interaction between dislocations and In in-doped GaAs single crystals under high-temperature plastic deformationDJEMEL, A; CASTAING, J; DUSEAUX, M et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1988, Vol 57, Num 4, pp 671-676, issn 0141-8610Article

Réduction des dislocations dans le GaAs massif = Diminution of dislocations in bulk GaAsMARTIN, G. M; DUSEAUX, M.1984, 34 p.Report

DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPINGJACOB G; DUSEAUX M; FARGES JP et al.1983; JOURNAL OF CRYSTAL GROWTH; ISSN 0022-0248; NLD; DA. 1983; VOL. 61; NO 2; PP. 417-424; BIBL. 12 REF.Article

Etude par microscopie électronique en transmission de petits défauts dans les monocristaux de GaAs semi-isolants = Transmission electronic microscopy study of small defects in semi-isolating GaAs single crystalsCHEVALIER, J. P; DUSEAUX, M.1985, 24 p.Report

Thermal activation of plastic deformation of undoped GaAs between 528 and 813 KASTIE, P; COUDERC, J. J; CHOMEL, P et al.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp 225-242, issn 0031-8965Article

Evidence of the origin of infrared scattering in GaAs with high-resolution infrared tomographySUCHET, P; DUSEAUX, M; GILLARDIN, G et al.Journal of applied physics. 1987, Vol 62, Num 9, pp 3700-3703, issn 0021-8979Article